Inventor · Rexford, NY, US

Hong Yu

54Patents
12h-index
60Co-inventors
87Inventor score

Filing activity: Jan 26, 1994 → Aug 22, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US5410693A Method and apparatus for accessing a database Physics 69 Expired
US9368496B1 Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devices Electricity 45 Active
US9455198B1 Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices Electricity 36 Active
US9406676B2 Method for forming single diffusion breaks between finFET devices and the resulting devices Electricity 35 Active
US9337306B2 Multi-phase source/drain/gate spacer-epi formation Electricity 26 Active
US10083874B1 Gate cut method Electricity 23 Active
US9324713B1 Eliminating field oxide loss prior to FinFET source/drain epitaxial growth Electricity 22 Active
US9024368B1 Fin-type transistor structures with extended embedded stress elements and fabrication methods Electricity 17 Active
US9159794B2 Method to form wrap-around contact for finFET Electricity 14 Active
US8962474B2 Method for forming an air gap around a through-silicon via Electricity 14 Active
US9553194B1 Method for improved fin profile Electricity 13 Active
US9419101B1 Multi-layer spacer used in finFET Electricity 12 Active
US9443956B2 Method for forming air gap structure using carbon-containing spacer Electricity 11 Active
US9935104B1 Fin-type field effect transistors with single-diffusion breaks and method Electricity 9 Active
US10090382B1 Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same Electricity 9 Active
US9153693B2 FinFET gate with insulated vias and method of making same Electricity 9 Active
US10014296B1 Fin-type field effect transistors with single-diffusion breaks and method Electricity 9 Active
US10373877B1 Methods of forming source/drain contact structures on integrated circuit products Electricity 8 Active
US10074732B1 Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages Electricity 7 Active
US9425127B2 Method for forming an air gap around a through-silicon via Electricity 5 Active
US10784342B1 Single diffusion breaks formed with liner protection for source and drain regions Electricity 5 Active
US8916939B2 Reliable contacts Emerging Cross-Sectional Technologies 4 Active
US10522410B2 Performing concurrent diffusion break, gate and source/drain contact cut etch processes Electricity 4 Active
US10522679B2 Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures Electricity 4 Active
US10403548B2 Forming single diffusion break and end isolation region after metal gate replacement, and related structure Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.