Method for manufacturing silicon single crystal wafer and annealed wafer
US8916953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.