Plasma generation device and plasma processing device
US8917022B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 21, 2009 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Feb 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.