Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same
US8917545B2 · kind B2 · utility
5Cited by
1References
1Claims
0Family size
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Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.