Half bit line high level voltage genertor, memory device and driving method
US8917560B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4074
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A half bit line high level voltage generator, a memory device and a driving method are disclosed herein. The half bit line high level voltage generator includes a control module, a driving module and a detecting module. The control module is configured for generating a first control signal and a second control signal in accordance with an update signal and a half bit line high level voltage. The driving module is configured for generating a half bit line high level voltage to a memory device in accordance with the first control signal and the second control signal. The detecting module is configured for detecting whether a cross current flows through the driving module, and accordingly generating the update signal to adjust the driving module to reduce the cross current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.