Substrate-topography-aware lithography modeling
US8918744B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 6, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/20
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Described herein is a method for simulating an image formed within a resist layer on a substrate resulting from an incident radiation, the substrate having a first feature and a second feature underlying the resist layer, the method comprising: simulating a first partial image using interaction of the incident radiation and the first feature without using interaction of the incident radiation and the second feature; simulating a second partial image using the interaction of the incident radiation and of the second feature without using the interaction of the incident radiation and the first feature; computing the image formed within the resist layer from the first partial image, and the second partial image; wherein the interaction of the incident radiation and the first feature is different from the interaction of the incident radiation and the second feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.