Plasma processing apparatus and plasma processing method
US8920665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.