Tone inversion of self-assembled self-aligned structures
US8921030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 9, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.