HsinYu Tsai
56Patents
7h-index
60Co-inventors
71Inventor score
Filing activity: Dec 2, 2011 → Dec 2, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9576817B1 | Pattern decomposition for directed self assembly patterns templated by sidewall image transfer | Physics | 26 | Active |
| US8656322B1 | Fin design level mask decomposition for directed self assembly | Electricity | 21 | Active |
| US9306164B1 | Electrode pair fabrication using directed self assembly of diblock copolymers | Electricity | 20 | Active |
| US8771929B2 | Tone inversion of self-assembled self-aligned structures | Performing Operations; Transporting | 12 | Active |
| US9102540B2 | Graphene nanomesh based charge sensor | Physics | 10 | Active |
| US9646883B2 | Chemoepitaxy etch trim using a self aligned hard mask for metal line to via | Electricity | 9 | Active |
| US9337033B1 | Dielectric tone inversion materials | Physics | 8 | Active |
| US9281212B1 | Dielectric tone inversion materials | Physics | 5 | Active |
| US9852260B2 | Method and recording medium of reducing chemoepitaxy directed self-assembled defects | Emerging Cross-Sectional Technologies | 4 | Active |
| US9738765B2 | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers | Chemistry; Metallurgy | 4 | Active |
| US9053982B2 | Local tailoring of fingers in multi-finger fin field effect transistors | Electricity | 3 | Active |
| US9057960B2 | Resist performance for the negative tone develop organic development process | Physics | 3 | Active |
| US8921030B2 | Tone inversion of self-assembled self-aligned structures | Performing Operations; Transporting | 3 | Active |
| US10059820B2 | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers | Chemistry; Metallurgy | 2 | Active |
| US10114921B2 | Method and recording medium of reducing chemoepitaxy directed self-assembled defects | Emerging Cross-Sectional Technologies | 2 | Active |
| US9766229B2 | Graphene nanomesh based charge sensor | Physics | 1 | Active |
| US9911603B2 | Pattern decomposition for directed self assembly patterns templated by sidewall image transfer | Physics | 1 | Active |
| US9349640B1 | Electrode pair fabrication using directed self assembly of diblock copolymers | Electricity | 1 | Active |
| US9941121B1 | Selective dry etch for directed self assembly of block copolymers | Electricity | 1 | Active |
| US10600656B2 | Directed self-assembly for copper patterning | Electricity | 1 | Active |
| US11461640B2 | Mitigation of conductance drift in neural network resistive processing units | Physics | 1 | Active |
| US9558310B2 | Method and system for template pattern optimization for DSA patterning using graphoepitaxy | Emerging Cross-Sectional Technologies | 1 | Active |
| US9659824B2 | Graphoepitaxy directed self-assembly process for semiconductor fin formation | Electricity | 1 | Active |
| US10606980B2 | Method and recording medium of reducing chemoepitaxy directed self-assembled defects | Emerging Cross-Sectional Technologies | 1 | Active |
| US10211054B1 | Tone inversion integration for phase change memory | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.