Patent · US Active

Nanopyramid sized opto-electronic structure and method for manufacturing of same

US8921141B2 · kind B2 · utility

6Cited by

3References

29Claims

0Family size

Assignee

GLO AB · SE

Inventors

Olga Kryliouk · Gainesville, US
Nathan Gardner · Provo, US
Giuliano Portilho Vescovi · Lund, SE

Key dates

Filing date	Sep 18, 2013
Grant date	Dec 30, 2014
Priority date	—
Expiry date	Sep 18, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/813
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.