Process of forming an electronic device including a nonvolatile memory cell
US8921175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.