Method of fabricating an integrated circuit device
US8921177B2 · kind B2 · utility
5Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2011 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Apr 27, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
Abstract
A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.