Methods of forming a transistor device on a bulk substrate and the resulting device
US8921188B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes forming a trench within an isolated region of a bulk semiconductor substrate, forming a region of an insulating material in the trench and forming a semiconductor material within the trench and above the upper surface of the region of insulating material. A substrate disclosed herein includes an isolated substrate region in a bulk semiconductor substrate, a region of an insulating material that is positioned within a trench defined in the isolated substrate region and a semiconductor material positioned within the trench and above the upper surface of the region of insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.