Method for fabricating semiconductor device
US8921208B1 · kind B1 · utility
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3References
10Claims
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Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial layer in the second area using the first insulating layer as a growth prevention layer, and forming a first semiconductor layer on the semiconductor substrate including the sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.