Semiconductor substrate and method of forming
US8921210B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductive substrate material for an electronic device including forming a plurality of semiconductive layers on a substrate during a continuous growth process in a reaction chamber, wherein during the continuous growth process, a release layer is formed between a base layer and an epitaxial layer by altering at least one growth process parameter during the continuous growth process. The method also including separating the plurality of semiconductive layers from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.