Patent · US Active

Vertical-conduction integrated electronic device and method for manufacturing thereof

US8921211B2 · kind B2 · utility

4Cited by

30References

6Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Ferruccio Frisina · Gravina di Catania, IT
Mario Giuseppe Saggio · Nettuno, IT
Angelo Magri · Mascalucia, IT

Key dates

Filing date	Jan 28, 2014
Grant date	Dec 30, 2014
Priority date	—
Expiry date	Jan 28, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment of a vertical-conduction integrated electronic device formed in a body of semiconductor material which includes: a substrate made of a first semiconductor material and with a first type of conductivity, the first semiconductor material having a first bandgap; an epitaxial region made of the first semiconductor material and with the first type of conductivity, which overlies the substrate and defines a first surface; and a first epitaxial layer made of a second semiconductor material, which overlies the first surface and is in direct contact with the epitaxial region, the second semiconductor material having a second bandgap narrower than the first bandgap. The body moreover includes a deep region of a second type of conductivity, extending underneath the first surface and within the epitaxial region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.