Process for fabricating a transistor comprising nanocrystals
US8921219B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Feb 5, 2014 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Feb 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A process for fabricating a transistor may include forming source and drain regions in a substrate, and forming a floating gate having electrically conductive nanoparticles able to accumulate electrical charge. The process may include deoxidizing part of the floating gate located on the source side, and oxidizing the space resulting from the prior deoxidation so as to form an insulating layer on the source side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.