Selective titanium nitride etching
US8921234B2 · kind B2 · utility
183Cited by
423References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.