Phase-change random access memory device having multi-levels and method of manufacturing the same
US8921817B2 · kind B2 · utility
4Cited by
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14Claims
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Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Apr 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change random access memory (PCRAM) device and a method of manufacturing the same. The PCRAM includes a heating electrode having an upper surface protruding in a stepped shape and a phase-change material layer formed in a phase-change space on the heating electrode, the phase-change material layer having a plurality of portions having thicknesses corresponding to the stepped shape of the heating electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.