Resistance variable memory structure

US8921818B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Kuo-Chi Tu · Baoshan, TW
• Wen-Ting Chu
• Chin-Chieh Yang · New Taipei, TW
• Yu-Wen Liao · New Taipei, TW
• Hsia-Wei Chen · Taipei, TW
• Chih-Yang Chang · 員林市, TW

Key dates

• Filing date: Nov 9, 2012
• Grant date: Dec 30, 2014
• Expiry date: Nov 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/823

Abstract

A semiconductor structure includes a resistance variable memory structure. The semiconductor structure also includes a dielectric layer. The resistance variable memory structure is over the dielectric layer. The resistance variable memory structure includes a first electrode disposed over the dielectric layer. The first electrode has a sidewall surface. A resistance variable layer has a first portion which is disposed over the sidewall surface of the first electrode and a second portion which extends from the first portion away from the first electrode. A second electrode is over the resistance variable layer.