Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device
US8921890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Jul 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
According to example embodiments, a substrate structure may include a GaN-based third material layer, a GaN-based second material layer, a GaN-based first material layer, and a buffer layer on a non-GaN-based substrate. The GaN-based first material layer may be doped with a first conductive type impurity. The GaN-based second material layer may be doped with a second conductive type impurity at a density that is less than a density of the first conductive type impurity in the first GaN-based material layer. The GaN-based third material layer may be doped with a first conductive type impurity at a density that is less than the density of the first conductive type impurity of the GaN-based first material layer. After a second substrate is attached onto the substrate structure, the non-GaN-based substrate may be removed and a GaN-based vertical type semiconductor device may be fabricated on the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.