Three-dimensional semiconductor devices
US8921918B2 · kind B2 · utility
23Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2011 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Apr 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.