Semiconductor structure and method for operating the same
US8921933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2011 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor structure and a method for operating the same are provided. The semiconductor structure includes a substrate, a first doped region, a second doped region, a third doped region, a first trench structure and a second gate structure. The first doped region is in the substrate. The first doped region has a first conductivity type. The second doped region is in the first doped region. The second doped region has a second conductivity type opposite to the first conductivity type. The third doped region having the first conductivity type is in the second doped region. The first trench structure has a first gate structure. The first gate structure and the second gate structure are respectively on different sides of the second doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.