Laterally diffused metal oxide semiconductor (LDMOS) device with overlapping wells
US8921938B1 · kind B1 · utility
1Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
Some of the embodiments of the present disclosure provide a transistor comprising a p-type well; and an n-type well; wherein at least a part of one of the p-type well and the n-type well overlaps with at least a part of another of the p-type well and the n-type well. Other embodiments are also described and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.