Memristor cell structures for high density arrays
US8921960B2 · kind B2 · utility
7Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8616
Abstract
A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.