High voltage metal-oxide-semiconductor transistor device
US8921972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | May 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
A high voltage metal-oxide-semiconductor (HV MOS) transistor device includes a substrate, a drifting region formed in the substrate, a plurality of isolation structures formed in the drift region and spaced apart from each other by the drift region, a plurality of doped islands respectively formed in the isolation structures, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective two sides of the gate. The gate covers a portion of each isolation structure. The drift region, the source region, and the drain region include a first conductivity type, the doped islands include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.