System and method for forming aluminum fuse for compatibility with copper BEOL interconnect scheme
US8921975B2 · kind B2 · utility
6Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Jun 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.