Patent · US Active

Stacked wafer with coolant channels

US8921992B2 · kind B2 · utility

14Cited by

15References

9Claims

0Family size

Assignee

Raytheon Company · US

Inventors

Christopher R. Koontz · Manhattan Beach, US
Tse E. Wong · Los Alamitos, US
Jason G. Milne · El Segundo, US

Key dates

Filing date	Mar 14, 2013
Grant date	Dec 30, 2014
Priority date	—
Expiry date	Mar 14, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2225/06589
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer assembly with internal fluid channels. The assembly is fabricated by creating one or more channels in a first surface of a first semiconductor wafer and creating an oxide surface on the first surface of the first semiconductor wafer. An oxide surface is also created on a first surface of a second semiconductor wafer. The assembly is fabricated by bonding the oxide surface of the first surface of the first semiconductor wafer to the oxide surface of the first surface of the second semiconductor wafer to create a wafer assembly and to seal the one or more channels at edges defined by the bonded first and second surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.