Copper bump structures having sidewall protection layers
US8922004B2 · kind B2 · utility
9Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2010 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/37001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection layer includes a compound of copper and a polymer, and is a dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.