Semiconductor device and semiconductor device manufacturing method
US8922018B2 · kind B2 · utility
11Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.