FinFET based one-time programmable device
US8923070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Oct 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a one-time programmable (OTP) device comprises a memory FinFET in parallel with a sensing FinFET. The memory FinFET and the sensing FinFET share a common source region, a common drain region, and a common channel region. The memory FinFET is programmed by having a ruptured gate dielectric, resulting in the sensing FinFET having an altered threshold voltage and an altered drain current. A method for utilizing such an OTP device comprises applying a programming voltage for rupturing the gate dielectric of the memory FinFET thereby achieving a programmed state of the memory FinFET, and detecting by the sensing FinFET the altered threshold voltage and the altered drain current due to the programmed state of the memory FinFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.