Substrate processing apparatus and method of manufacturing semiconductor device
US8925562B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32577
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus includes a first gas supply system provided with a source gas supply control unit; a second gas supply system provided with a reactive gas supply control unit; a third gas supply system provided with a cleaning gas supply control unit; a shower head unit including a buffer chamber connected to the gas supply systems and a dispersion plate installed at a downstream side of the buffer chamber; a substrate support installed at a downstream side of the dispersion plate and electrically grounded; a process chamber accommodating the substrate support; a plasma generation unit including a power supply and a switch configured to switch plasma generation between the buffer chamber and the process chamber; and a control unit configured to control the source gas supply control unit, the reactive gas supply control unit and the plasma generation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.