Method of producing a group III nitride crystal
US8926752B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jan 22, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.