Apparatus and methods for movable megasonic wafer probe

US8926762B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ying-Hsueh Chang Chien · New Taipei, TW
• Shao-Yen Ku · Zhubei City, TW
• Ming-Hsi Yeh · Hsinchu, TW
• Chi-Ming Yang · Hsinchu, TW
• Chin-Hsiang Lin · Hsinchu, TW

Key dates

• Filing date: Sep 6, 2011
• Grant date: Jan 6, 2015
• Expiry date: May 31, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/6704
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.