Method and device for bonding two wafers
US8926775B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
Inventor
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Mar 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device for bonding of two wafers on one joining surface V of the wafers. The device includes a pressure transfer means with a pressure surface D for applying a bond pressure to the two wafers on the pressure surface D, wherein the pressure surface D is smaller than the joining surface V. The invention also relates to a method for bonding of two wafers on one joining surface V of the two wafers, by pressure transfer means with a pressure surface D for action on the wafers (2, 3), wherein a bond pressure is applied in succession to partial sections of the joining surface V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.