Plasma processing with enhanced charge neutralization and process control
US8926850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.