Graphene formation utilizing solid phase carbon sources
US8927057B2 · kind B2 · utility
13Cited by
2References
13Claims
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Key dates
| Filing date | Feb 22, 2010 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Feb 8, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a single, few-layer, or multi-layer graphene and structure is described incorporating selecting a substrate having a buried layer of carbon underneath a metal layer, providing an ambient and providing a heat treatment to pass carbon through the metal layer to form a graphene layer on the metal layer surface or incorporating a metal-carbon layer which is heated to segregate carbon in the form of graphene to the surface or chemically reacting the metal in the metal-carbon layer with a substrate containing Si driving the carbon to the surface whereby graphene is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.