Dynamic random access memory unit and method for fabricating the same

US8927966B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Libin Liu · Beijing, CN
• Renrong Liang · Beijing, CN
• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN

Key dates

• Filing date: Oct 18, 2012
• Grant date: Jan 6, 2015
• Expiry date: Mar 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/01

Abstract

A dynamic random access memory unit and a method for fabricating the same are provided. The dynamic random access memory unit comprises: a substrate; an insulating buried layer formed on the substrate; a body region formed on the insulating buried layer and used as a charge storing region; two isolation regions formed on the body region, in which a semiconductor contact region is formed between the isolation regions and is a charge channel; a source, a drain and a channel region formed on the isolation regions and the semiconductor contact region respectively and constituting a transistor operating region which is partially separated from the charge storing region by the isolation regions and connected with the charge storing region via the charge channel; a gate dielectric layer formed on the transistor operating region, a gate formed on the gate dielectric layer; a source metal contact layer, a drain metal contact layer.