Current-amplifying transistor device and current-amplifying, light-emitting transistor device
US8927972B2 · kind B2 · utility
2Cited by
2References
30Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 3, 2010 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/654
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A current-amplifying transistor device is provided, between an emitter electrode and a collector electrode, with two organic semiconductor layers and a sheet-shaped base electrode. One of the organic semiconductor layers is arranged between the emitter electrode and the base collector electrode, and has a diode structure of a p-type organic semiconductor layer and an n-type p-type organic semiconductor layer. A current-amplifying, light-emitting transistor device including the current-amplifying transistor device and an organic EL device portion formed in the current-amplifying transistor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.