Patent · US Active

Vertical semiconductor device with thinned substrate

US8928068B2 · kind B2 · utility

8Cited by
12References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 4, 2013
Grant dateJan 6, 2015
Priority date—
Expiry dateApr 4, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D10/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least a portion of a substrate material has been removed to isolate the active device, to expose at least one of the semiconductor structures for bottom side electrical connection and to enhance thermal dissipation. At least one of the semiconductor structures is preferably contacted by an electrode at the bottom side of the active semiconductor region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.