Semiconductor package with integrated electromagnetic shielding
US8928128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.