Gate driving circuit
US8928368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2014 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/08142
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate driving circuit for driving an insulated gate switching element, including a gate charging circuit configured to charge gate capacitance of the insulated gate switching element, and a gate discharging circuit that is connected in series with the gate charging circuit and configured to discharge a charge of the gate capacitance. The gate charging circuit includes a first p-channel metal oxide semiconductor field effect transistor (MOSFET), and a first hybrid normally-on enhancement MOSFET insertion (NOEMI) circuit connected in series with a drain of the first p-channel MOSFET. The gate discharging circuit includes a first n-channel MOSFET, and a second hybrid NOEMI circuit connected in series with a drain of the first n-channel MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.