Porous metal etching

US8932476B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Kunstmann · Hemau, DE
• Stefan Willkofer · Munich, DE
• Anja Gissibl · Regensburg, DE
• Johann Strasser · Schierling, DE
• Matthias Mueller · Harsefeld, DE
• Eva-Maria Hess · Gremsdorf, DE

Key dates

• Filing date: Feb 7, 2013
• Grant date: Jan 13, 2015
• Expiry date: Feb 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.