Atomic layer deposition lithography
US8932802B2 · kind B2 · utility
321Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.