Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device
US8932891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2006 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Nov 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.