Through silicon via bonding structure
US8932906B2 · kind B2 · utility
3Cited by
52References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2008 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/07025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor substrate that will be bonded to the first semiconductor substrate. The two substrates are aligned and bonded together, with the buffer layer preventing any short circuit contacts to the surface of the original semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.