Semiconductor device and method for manufacturing the same
US8932915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2011 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device manufacturing method of an embodiment includes the steps of: forming a first insulating layer on a semiconductor substrate; forming on the first insulating layer an amorphous or polycrystalline semiconductor layer having a narrow portion; forming on the semiconductor layer a second insulating layer having a thermal expansion coefficient larger than that of the semiconductor layer; performing thermal treatment; removing the second insulating layer; forming a gate insulating film on the side faces of the narrow portion; forming a gate electrode on the gate insulating film; and forming a source-drain region in the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.