Capacitive discharge programming for two-terminal memory cells
US8934280B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2013 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Feb 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for capacitive programming of two-terminal memory devices is described herein. By way of example, a capacitance circuit can be precharged to a predetermined program voltage to facilitate programming one or more memory cells. The capacitance circuit can be disconnected from a power source and connected instead to the memory cell(s), enabling charge stored by the capacitance circuit to discharge through the memory cell(s). A current at the memory cell(s) can program the cell, while a total amount of discharge is limited to the charge stored by the capacitance circuit. Limiting the total charge can serve to also limit joule heating of the target memory cell, power consumption of a memory device, as well as other benefits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.