Memory device and method for sensing a content of a memory cell
US8934315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2009 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Nov 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device to sense a content of a memory cell includes: a pair of bit-lines; a memory cell coupled between the bit-lines; and a sensing circuit. The sensing circuit has at least two inputs for receiving respective currents from a current conveyor, and senses, when operating in a sensing mode, a difference between output currents. The difference between the output currents represents a content of the memory cell. The sensing circuit includes an output for outputting an output signal that represents the content of the memory cell. The current conveyor isolates the sensing circuit from the bit-lines, when the current conveyor is operated in an isolation mode, and has at least two outputs for providing, to the sensing circuit, output currents representing bit-lines currents; and equalizing the output currents before the current conveyor starts to operate in a current conveying mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.