Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
US8936682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2011 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Aug 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A manufacturing method of a SiC single crystal includes growing a SiC single crystal on a surface of a SiC seed crystal, which satisfies following conditions: (i) the SiC seed crystal includes a main growth surface composed of a plurality of sub-growth surfaces; (ii) among directions from an uppermost portion of a {0001} plane on the main growth surface to portions on a periphery of the main growth surface, the SiC seed crystal has a main direction in which a plurality of sub-growth surfaces is arranged; and (iii) an offset angle θk of a k-th sub-growth surface and an offset angle θk+1 of a (k+1)-th sub-growth surface satisfy a relationship of θk<θk+1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.